Support Telecomtalk
Andrew Bonwick
Vice President of Product Development at Relm Insurance
Madhav Sheth
CEO of Ai+ Smartphone
Stephen Rose
CEO Render Networks
While we are still a couple of months away from the official release of Samsung flagship Galaxy S9 and S9+ smartphones, a number of leaks have provided more than enough information about the upcoming devices. With Samsung manufacturing the Qualcomm Snapdragon 845 SoC, it is expected that the company will use them to power the Galaxy S9 and S9+.
- Make Telecom Talk My Trusted Source
-
-
This has now been confirmed a new benchmark tests of allegedly the Galaxy S9+. A device with model SM-G965U1 which corresponds to the larger flagship model was tested on GeekBench benchmark website.
The Samsung Galaxy S9+ got a single-core benchmark score of 2422, and a multi-core score of 8351 as per the screenshot available. Previous Samsung phones were never able to breach the 2000 mark in single core and while multi-core result never topped 6500 mark. Those are some powerful scores and are pretty close to Apple’s A11 Bionic chip powered devices.
The single-core score gets a noticeable bump with over 27% performance improvement over the Snapdragon 835. The multi-core score gets a 31% percent performance bump. However, the score is still below the Apple’s new A11 Bionic chipset.
The GeekBench test also shows the Samsung Galaxy S9+ will come with 6GB of RAM. The device is also shown to run Android 8.0 Oreo out of the box, which isn’t surprising.
There have been other leaks as well over the past few weeks. A reputable leaker going by the name Onleaks revealed CAD-based 3D renders of the upcoming flagship. As far as the design is concerned, the S9 and S9 Plus will come with same design up front as older S8 and S8 plus devices.
